Carbon nanotube films as ultrasensitive photodetectors Semiconducting single-walled carbon nanotubes (s-SWCNTs) are being used to develop a third generation of optimized shortwave infrared photodetectors that will improve pixel size, weight, power consumption, performance and cost over photodetectors made from traditional materials.Get more news about carbon nanotube film seller,you can vist our website! Ultrasensitive shortwave infrared photodetectors, which detect a subset of shortwave infrared light wavelengths outside of the visual spectrum, have many potential applications, including night surveillance, navigation during poor weather conditions, fiber optic communications and semiconductor quality control. Shortwave infrared photodetectors have traditionally been made out of III-V materials like indium gallium arsenide (InGaAs). InGaAs photodetectors are expensive, however, and current research into alternative photodetector materials, such as s-SWCNTs, will ideally reduce the cost of shortwave infrared photodetectors while increasing both performance and efficiency. A team of leading scientists from Peking University outlined the current technology and challenges associated with developing s-SWCNT films into shortwave infrared photodetectors to spur additional research and applications of the technology. Current advances in solution purification technology will facilitate the development of high-purity s-SWCNT films suitable for large-area, homogenous and high-performance optoelectronic devices and applications that detect and process light, including photodetectors. Further optimization of film purity, thickness, clarity and array alignment must be achieved before s-SWCNT films will meet or exceed the performance level of traditional, more expensive photodetectors made of InGaAs or similar materials. Reviewing the progress of the s-SWCNTs film photodetectors can clarify the current research status, challenges and applications of s-SWCNT film photodetectors and optoelectronic integration," said Sheng Wang, one of the authors of the review paper and associate professor at the School of Electronics at Peking University, China. "We outlined s-SWCNT technology in three sections: (1) the current research status of the s-SWCNT film photodetectors, (2) the current research status of monolithic/three-dimension optoelectronic integration based on s-SWCNT film photodetectors and (3) the requirements of s-SWCNT film and device structure for ideal s-SWCNT film photodetectors and optoelectronic integration," said Wang.